Molding apparatus and manufacturing method of molded semiconductor device

ABSTRACT

A molding apparatus is configured for molding a semiconductor device and includes a lower mold and an upper mold. The lower mold is configured to carry the semiconductor device. The upper mold is disposed above the lower mold for receiving the semiconductor device and includes a mold part and a dynamic part. The mold part is configured to cover the upper surface of the semiconductor device. The dynamic part is disposed around a device receiving region of the upper mold and configured to move relatively to the mold part. A molding method and a molded semiconductor device are also provided.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a continuation application of and claims thepriority benefit of a prior application Ser. No. 16/398,164, filed onApr. 29, 2019. The entirety of the above-mentioned patent application ishereby incorporated by reference herein and made a part of thisspecification.

BACKGROUND

According to the convention semiconductor packaging technology, aplurality of semiconductor chips are disposed in an array with constantspacing and pitches on a substrate. After processes of electricalconnection between the chips and the substrate, molding material areformed on top of the substrate to encapsulate the chips. Then, themolding material is cured and singulated by a dicing blade or by a laserto obtain a plurality of individual semiconductor devices.

When the molding material is injected to encapsulate the chip and fillinto a gap between substrate and the chip, there is a possibility of aregion where the molding material is not formed, i.e., a void, beingformed in the gap between the substrate and the chip. This is due to theoccurrence of a difference in flow velocity of the molding materialbetween a region where bumps electrodes (conductive terminals) exist anda region where no bump electrodes exist. The molding material flowsfaster downstream in a region where no bump electrodes exist, and entersa region where the bump electrodes exist in a roundabout fashion. Due tosuch a flow of the molding material in a roundabout fashion, a spacesurrounded by the molding material, i.e., a void, occurs in the vicinityof the region where the bump electrodes exist.

After filling the gaps between the substrate and the chip with themolding material, a treatment for thermally setting the molding materialis performed, and stress is caused in the package by thermal expansionand thermal contraction. The above-described void in the vicinity of thebump electrodes reduces the durability under thermal stress.Accordingly, there is a possibility of breakage of the bump electrodesand, hence, a reduction in reliability of the semiconductor package.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1 illustrates a cross sectional view of a molding apparatusaccording to some exemplary embodiments of the present disclosure.

FIG. 2 to FIG. 4 illustrate cross sectional views of intermediate stagesin a manufacturing of a molded semiconductor device according to someexemplary embodiments of the present disclosure.

FIG. 5 to FIG. 7 illustrate cross sectional views of intermediate stagesin a manufacturing of a molded semiconductor device according to someexemplary embodiments of the present disclosure.

FIG. 8 illustrates a top view of a molding apparatus according to someexemplary embodiments of the present disclosure.

FIG. 9 illustrates a top view of a molding apparatus according to someexemplary embodiments of the present disclosure.

FIG. 10 illustrates a top view of a molding apparatus according to someexemplary embodiments of the present disclosure.

FIG. 11 illustrates a cross sectional view of a molded semiconductordevice according to some exemplary embodiments of the presentdisclosure.

FIG. 12 illustrates a top view of a molded semiconductor deviceaccording to some exemplary embodiments of the present disclosure.

FIG. 13 illustrates a top view of a molded semiconductor deviceaccording to some exemplary embodiments of the present disclosure.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Embodiments of the present disclosure which are now described in detailprovide a molding apparatus, a manufacturing method of a moldedsemiconductor device utilizing the molding apparatus and a moldedsemiconductor device formed by the manufacturing method for providing amolding material encapsulating a semiconductor device without voidsoccurs in the gap between the semiconductor device and the substrate. Arelease film may be used to make release of the finished devices easier.In an embodiment, a dynamic part configured to move relatively to theupper mold is used to provide accurate control of flow of the moldingmaterial. Voids in the molding material between the dice and thesubstrate observed in the prior known approaches are reduced oreliminated. The method embodiments are implemented without substantialchanges to the molding material, the substrate or the semiconductordevice (integrated circuit dies).

FIG. 1 illustrates a cross sectional view of a molding apparatusaccording to some exemplary embodiments of the present disclosure. FIG.2 to FIG. 4 illustrate cross sectional views of intermediate stages in amanufacturing of a molded semiconductor device according to someexemplary embodiments of the present disclosure. With now reference toFIG. 1 and FIG. 2 , in some embodiments, a manufacturing method of amolded semiconductor device may include the following steps. First ofall, mounting a semiconductor device 210, illustrated in FIG. 2 , forexample, on a substrate 220. In accordance with some embodiments of thedisclosure, the semiconductor device 210 may be, but not limited to, anintegrated circuit dies. In some embodiments, the semiconductor device210 may be logic device dies including logic circuits therein. In someexemplary embodiments, the semiconductor device 210 are dies that aredesigned for mobile applications, and may include a Power ManagementIntegrated Circuit (PMIC) die and a Transceiver (TRX) die, for example.Although one semiconductor device 210 are illustrated, moresemiconductor device 210 may be placed over the substrate 220 and levelwith one another.

In some embodiments, the semiconductor device 210 may be mounted on asubstrate 220 through, for example, a plurality of conductive terminals230. In some embodiments, the substrate 220 may be, in one non-limitingexample, a semiconductor wafer, or a portion of a wafer. The wafer maybe silicon, gallium arsenide, silicon on insulator (“SOT”) or othersimilar materials. The wafer may include passive devices such asresistors, capacitors, inductors and the like, or active devices such astransistors. The semiconductor wafer substrate may, in an exampleembodiment, include additional integrated circuits. However, thesubstrate 220 may also be of other materials in alternative embodiments.For example, multiple layer circuit boards may be used. In someembodiments, the substrate 220 may be of bismaleimide triazine (BT)resin, FR4, ceramic, glass, plastic, tape, film, or other supportingmaterials that may carry the conductive pads or lands needed to receivethe conductive terminals 230 for mounting the semiconductor device 210through, for example, a flip chip bonding technique.

In accordance with some embodiments of the disclosure, the semiconductordevice 210 shown in FIG. 2 may be arranged as a flip chip integratedcircuit mounted onto the substrate 220. In flip chip mounting of thesemiconductor device 210, the semiconductor device 210 receiveconnectors such as conductive terminals 230 on the bond pad terminals ofthe semiconductor device 210. In a non-limiting example, the conductiveterminals 230 may be solder bumps. The solder material of the solderbumps may be lead based, or alternatively it may be lead free, such assilver, copper, or tin compositions. The conductive terminals 230 willbe eutectics with a common melting point for use in a reflow process. Insome embodiments, the conductive terminals 230 can be plated usingelectro or electroless plating techniques, or may be formed usingscreening or jet printing techniques. In some embodiments, theconductive terminals 230 may be also be other types such as copper orgold pillars, conductive studs, or C4 columns. The disclosure is notlimited thereto. It is noted that a flip chip semiconductor device 210mounted onto the substrate 220 is illustrated for the molding process,but the disclosure is not limited thereto. In other embodiments, themanufacturing method and the molding apparatus described herein may alsoapplied to other packages such as integrated fan-out (InFO) packages forthe molding process.

In one example embodiment, the solder bumps are used for conductiveterminals 230 and the semiconductor device 210 are flipped over,aligned, and placed on the substrate 220 to place the conductiveterminals 230 in contact with lands on the substrate 220. Thesemiconductor device 210 and the conductive terminals 230 may then besubjected to a thermal solder reflow step to cause the conductiveterminals 230 to form electrical and physical connections to thesubstrate 220. Other methods for assembly of the embodiment of FIG. 2may be used, however, and the embodiments are not limited by theseexamples.

With such arrangement, the substrate 220 and the semiconductor device210 are now ready for a molding step to encapsulate the semiconductordevice 210. Accordingly, a molding apparatus 100 illustrated in FIG. 1 ,for example, is provided for performing the molding step. In accordancewith some embodiments of the disclosure, the molding apparatus 100 mayinclude a lower mold 110 and an upper mold 120. In some embodiments, thelower mold 110 is configured to carry the semiconductor device 210.Specifically, the lower mold 110 is configured to carry the substrate220 with the semiconductor device 210 mounted thereon. In someembodiments, the lower mold 110 may include a mold cavity foraccommodating the substrate 220, and the mold cavity is designedaccording to the dimensions and numbers and arrangement of mold areasand thickness of the substrate 220. However, in other embodiments, thelower mold 110 may be a substantially flat plate for the substrate 220to be placed thereon. The disclosure does not limit the arrangement ofthe lower mold 110.

In accordance with some embodiments of the disclosure, the upper mold120 is disposed (installed) above the lower mold 110 for receiving thesemiconductor device 210. The upper mold 120 and the lower mold 110 maybe made of metal or other suitable material. The disclosure is notlimited thereto. In some embodiments, the upper mold 120 may include adevice receiving region R1 for receiving the semiconductor device 210and molding material to be injected therein. In some embodiments, theupper mold 120 includes a mold part 122 and a dynamic part 124. The moldpart 122 is configured to cover the upper surface of the semiconductordevice 210. The dynamic part 124 is disposed around the device receivingregion R1 of the upper mold 120 and configured to move relatively to themold part 122 in order to control the flow direction of the moldingmaterial. In some embodiments, the mold part 122 defines the devicereceiving region R1 with the dynamic part 124.

In accordance with some embodiments of the disclosure, the mold part 122includes a lid portion 1221 and a side wall portion 1222. The side wallportion 1222 surrounds the lid portion 1221 and the dynamic part 124 isdisposed between the lid portion 1221 and the side wall portion 1222.The lid portion 1221, the dynamic part 124 and the side wall portion1222 jointly define a mold cavity, which is the device receiving regionR1. In some embodiments, a thickness of the lid portion 1221 issubstantially smaller than a thickness of the side wall portion 1222. Insome embodiments, the side wall portion 1222 may be in contact with theupper surface of the lower mold 110 during the molding process to definethe device receiving region R1 for accommodating the semiconductordevice 210 and molding material to be injected therein.

In accordance with some embodiments of the disclosure, the lid portion1221 may include a contact surface S1, which is configured to cover theupper surface of the semiconductor device 210. In some embodiments, thecontact surface S1 of the lid portion 1221 is configured to be incontact with the upper surface of the semiconductor device 210 duringthe molding process. In some embodiments, the contact surface S1 of thelid portion 1221 may be substantially higher than the upper surface ofthe semiconductor device 210. Namely, a gap may exist between thecontact surface S1 of the lid portion 1221 and the upper surface of thesemiconductor device 210, and the contact surface S1 may be in contactwith the molding material to be injected into the device receivingregion R1 during the molding process.

With now reference to FIG. 1 and FIG. 2 , before the molding process isperformed, i.e. before the molding material is injected into the devicereceiving region R1, the dynamic part 124 is moved relatively to themold part 122 along a first direction D1. In some embodiments, the firstdirection D1 is the (downward) direction toward the lower mold 110.Accordingly, the dynamic part 124 is moved to a first position, as it isshown in FIG. 2 , where a lower surface of the dynamic part 124 issubstantially lower than the contact surface S1 of the mold part 122(i.e. the lid portion 1221). In detail, the lower surface of the dynamicpart 124 is substantially lower than the contact surface S1 of the lidportion 1221 and substantially higher than the lower surface of the sidewall portion 1222.

In some embodiments, the lid portion 1221 covers the semiconductordevice 210, and the dynamic part 124 surrounds the periphery of thedevice receiving region R1. With such arrangement, when the dynamic part124 is moved to the first position shown in FIG. 2 , the dynamic part124 surrounds the side surfaces of the semiconductor device 210. That isto say, the dynamic part 124 is arranged corresponding to the area wherethe molding material is filled in the device receiving region R1. Insome embodiments, the contact surface S1 of the lid portion 1221, whichis in contact with the upper surface of the semiconductor device 210, issubstantially larger than the upper surface of the semiconductor device210 for tolerance (avoid damaging the semiconductor device 210). In someembodiments, a distance d1 is maintained between boundaries of thecontact surface S1 of the lid portion 1221 and the upper surface of thesemiconductor device 210. For example, the distance d1 may range from200 μm to 2000 μm.

With now reference to FIG. 3 , in some embodiments, the molding processmay now be performed. In accordance with some embodiments of thedisclosure, the molding apparatus 100 may further include an injectionport 130, which may be disposed at the lower mold 110 for injecting amolding material 240 into the device receiving region R1, but thedisclosure is not limited thereto. For example, the injection port 130may be disposed at the lower mold 110 and/or the upper mold 120 forinjecting the molding material 240 into the device receiving region R1.In some embodiments, the molding material 240 may include a moldingcompound, an epoxy, or a resin, etc., but the disclosure is not limitedthereto. In some embodiments, the upper mold 120 (e.g. the side wallportion 1222) may include an injection channel 128 and an injectioninlet 126. The injection channel 128 is in fluid communication with theinjection port 130 for the molding material 240 provided by theinjection port 130 to flow through. The injection channel 128 isconnected to the injection inlet 126, such that the molding material 240in the injection channel 128 may be injected into the device receivingregion R1 through the injection inlet 126 for encapsulating thesemiconductor device 210.

Generally speaking, the space between the semiconductor device 210 andthe substrate 220 is rather confining. Also, it is hard for the moldingmaterial 240 to fully fill in due to a difference in flow velocity ofthe molding material 240 between a region where conductive terminals 230exist and a region where no conductive terminals 230 exist, so the voidsmay occur. During the heating and cooling processes of molding process,solid or paste molding material 240 were melted and cured during curingprocesses. As such, voids in the cured molding material 240 would reducemechanical strengths of the products or product weights specified bycustomers. Moreover, when voids formed in the molding material 240,delamination or pop corn easily occurs between the semiconductor device210 and substrate 220 during thermal cycles leading to productreliability issues. Accordingly, the molding material 240 is needed tofully fill between the surfaces of the semiconductor device 210 and thesurface of substrate 220 without any voids formed therein.

Therefore, in some embodiments, the dynamic part 124 is moved relativelyto the mold part 122 to the first position where the lower surface ofthe dynamic part 124 is substantially lower than the contact surface S1of the lid portion 1221 before the molding material is injected into thedevice receiving region R1. Thereby, the molding material 240 injectedvia the injection inlet 126 would be forced to flow into the spacebetween the semiconductor device 210 and the substrate 220. In otherwords, with such arrangement, the molding material 240 is forced tofirstly fill the lower part of the device receiving region R1. It isnoted that the lower part of the device receiving region R1 is thecavity defined by the lid portion 1221, the side wall portion 1222 andthe dynamic part 124 at the first position as it is illustrated in FIG.3 . Accordingly, the molding material 240 would not firstly flow toelsewhere more spacious, such as the space around side surfaces of thesemiconductor device 210, and leave voids in the confining space betweenthe semiconductor device 210 and the substrate 220.

With now reference to FIG. 3 and FIG. 4 , in some embodiments, after themolding material 240 fully fills the lower part of the device receivingregion R1, the dynamic part 124 is moved relatively to the mold part 122along a second direction D2, which is opposite to the first directionD1. Accordingly, the dynamic part 124 is moved to a second position, asit is shown in FIG. 4 , where the lower surface of the dynamic part 124is substantially coplanar with the contact surface S1 of the lid portion1221. In some embodiments, the molding material 240 is injected into thedevice receiving region R1 while the dynamic part 124 is movedrelatively to the mold part 124 along the second direction D2, so themolding material 240 can gradually fill the space around the sidesurfaces of the semiconductor device 210. That is to say, the moldingmaterial 240 is continuously injected into the device receiving regionR1 when the dynamic part 124 is moved from the first position shown inFIG. 3 to the second position shown in FIG. 4 .

In other embodiments, the injection of the molding material 240 may beperformed in two separated stages. For example, the first stages is whenthe dynamic part 124 is moved to the first position shown in FIG. 3 ,the molding material 240 is injected until it is fully filled the lowerpart of the device receiving region R1. Then, the injection of themolding material 240 stops. Then, when the dynamic part 124 is moved tothe second position as it is shown in FIG. 4 , the second stage of theinjection of the molding material 240 begins, such that the moldingmaterial 240 can fill the rest part of the device receiving region R1.

With such arrangement, the molding apparatus 100 utilizes the dynamicpart 124 configured to be moved relatively to the mold part 122 tocontrol the flow the molding material 240 more precisely and reducevoids occurring in the molding material 240. In accordance with someembodiments of the disclosure, the dynamic part 124 is moved to thefirst position where the dynamic part 124 is substantially lower thanthe lid portion 1221 before the molding material is injected into thedevice receiving region R1. Thereby, the molding material 240 injectedvia the injection inlet 126 would be forced to firstly fill the lowerpart of the device receiving region R1. Accordingly, the moldingmaterial 240 would not firstly flow to elsewhere more spacious and leavevoids in the confining space between the semiconductor device 210 andthe substrate 220. Therefore, mechanical strengths of the moldedsemiconductor device (e.g., the molded semiconductor device 200illustrated in FIG. 11 ) formed by the molding apparatus 100 and themanufacturing method described above can be improved. Moreover, sincethere is no voids formed in the molding material 240, delamination orpop corn effect between the semiconductor device 210 and substrate 220can be avoided.

FIG. 5 to FIG. 7 illustrate cross sectional views of intermediate stagesin a manufacturing of a molded semiconductor device according to someexemplary embodiments of the present disclosure. It is noted that themanufacturing method of a molded semiconductor device shown in FIG. 5 toFIG. 7 contains many features same as or similar to the manufacturingmethod of a molded semiconductor device disclosed earlier with FIG. 2and FIG. 4 . For purpose of clarity and simplicity, detail descriptionof same or similar features may be omitted, and the same or similarreference numbers denote the same or like components. The maindifferences between the manufacturing method of the molded semiconductordevice shown in FIG. 5 to FIG. 7 and the manufacturing method of themolded semiconductor device disclosed earlier with FIG. 2 and FIG. 4 aredescribed as follows.

With now reference to FIG. 5 , in some embodiments, before the moldingmaterial 240 is injected into the device receiving region R1, thedynamic part 124 is moved relatively to the mold part 122 along a firstdirection D1′. In some embodiments, the first direction D1 is the(upward) direction moving away from the lower mold 110. Accordingly, thedynamic part 124 is moved to a first position, as it is shown in FIG. 5, where a lower surface of the dynamic part 124 is substantially higherthan a lower surface of the mold part 122 (i.e. the lid portion 1221).In detail, the lower surface of the dynamic part 124 is substantiallyhigher than the contact surface S1 of the lid portion 1221.

With now reference to FIG. 3 , in some embodiments, the molding processmay now be performed. In accordance with some embodiments of thedisclosure, the molding apparatus 100 may further include an injectionport 130, which may be disposed at the lower mold 110 and/or the uppermold 120 for injecting a molding material 240 into the device receivingregion R1. In some embodiments, the molding material 240 may include amolding compound, an epoxy, or a resin, etc., but the disclosure is notlimited thereto. In some embodiments, the upper mold 120 (e.g. the sidewall portion 1222) may include an injection channel 128 and an injectioninlet 126. The injection channel 128 is connected to the injection inlet126, such that the molding material 240 in the injection channel 128 maybe injected into the device receiving region R1 through the injectioninlet 126 for encapsulating the semiconductor device 210.

In accordance with some embodiments of the disclosure, after the dynamicpart 124 is moved relatively to the mold part 122 to the first positionwhere the lower surface of the dynamic part 124 is substantially higherthan the contact surface S1 of the lid portion 1221, the moldingmaterial 240 is then injected into the device receiving region R1. Insome embodiments, the molding material 240 may firstly flow to somewheremore spacious, such as the space around side surfaces of thesemiconductor device 210, and leave voids in the confining space betweenthe semiconductor device 210 and the substrate 220 as it is shown inFIG. 6 . The molding material 240 may continuously being injected intothe device receiving region R1 until the space around side surfaces ofthe semiconductor device 210 is substantially filled with the moldingmaterial 240, but the disclosure does not limit the timing of when tostop injecting the molding material 240.

With now reference to FIG. 6 and FIG. 7 , in some embodiments, after themolding material 240 substantially fills the space around side surfacesof the semiconductor device 210, the dynamic part 124 is movedrelatively to the mold part 122 along a second direction D2′, which isopposite to the first direction D1′. Accordingly, the dynamic part 124is moved to a second position, as it is shown in FIG. 7 , where thelower surface of the dynamic part 124 is substantially coplanar with thecontact surface S1 of the lid portion 1221. Accordingly, the moldingmaterial 240 in the device receiving region R1 would be pressed by thedynamic part 124 and forced to flow into the space between thesemiconductor device 210 and the substrate 220. In other words, withsuch arrangement, the molding material 240 is pushed and forced to fullyfill the space between the semiconductor device 210 and the substrate220.

In some embodiments, the molding material 240 is injected into thedevice receiving region R1 while the dynamic part 124 is movedrelatively to the mold part 124 along the second direction D2′, so themolding material 240 can gradually fill the space between thesemiconductor device 210 and the substrate 220. That is to say, themolding material 240 is continuously injected into the device receivingregion R1 when the dynamic part 124 is moved from the first positionshown in FIG. 6 to the second position shown in FIG. 7 .

In other embodiments, the molding material 240 may not be injected intothe device receiving region R1 while the dynamic part 124 is movedrelatively to the mold part 124 along the second direction D2′. Forexample, the first stages is when the dynamic part 124 is moved to thefirst position shown in FIG. 6 , the molding material 240 is injectedinto the device receiving region R1. The injection of the moldingmaterial 240 may stop until the molding material 240 is substantiallyfilled the space around the side surfaces of the semiconductor device210 (or until the top surface of the molding material 240 contacts thelower surface of the dynamic part 124). Then, the dynamic part 124 ismoved to the second position as it is shown in FIG. 7 to push themolding material 240 to fill the space between the semiconductor device210 and the substrate 220. Then, a second stage of the injection of themolding material 240 may be optionally applied if the molding material240 does not fully fill the device receiving region R1.

With such arrangement, the molding apparatus 100 utilizes the dynamicpart 124 configured to be moved relatively to the mold part 122 tocontrol the flow the molding material 240 more precisely and reducevoids occurring in the molding material 240. In accordance with someembodiments of the disclosure, the dynamic part 124 is moved to thefirst position where the dynamic part 124 is substantially higher thanthe lid portion 1221 before the molding material is injected into thedevice receiving region R1. Thereby, the molding material 240 maysubstantially fills the device receiving region R1 (at least the spacearound side surfaces of the semiconductor device 210). Then, the dynamicpart 124 is moved relatively to the mold part 122 to a second position,as it is shown in FIG. 7 , where the lower surface of the dynamic part124 is substantially coplanar with the contact surface S1 of the lidportion 1221. Accordingly, the molding material 240 in the devicereceiving region R1 would be pushed and forced to fully fill the spacebetween the semiconductor device 210 and the substrate 220. Therefore,mechanical strengths of the molded semiconductor device (e.g., themolded semiconductor device 200 illustrated in FIG. 11 ) formed by themolding apparatus 100 and the manufacturing method described above canbe improved. Moreover, since there is no voids formed in the moldingmaterial 240, delamination or pop corn effect between the semiconductordevice 210 and substrate 220 can be avoided.

FIG. 8 illustrates a top view of a molding apparatus according to someexemplary embodiments of the present disclosure. With now reference toFIG. 8 , in accordance with some embodiments of the disclosure, the lidportion 1221 and the side wall portion 1222 are spaced apart by thedynamic part 124 a. In the present embodiment, the dynamic part 124 a isarranged as a closed loop, which fully surrounds the lid portion 1221and isolate the lid portion 1221 from the side wall portion 1222. Withsuch arrangement, the molding material 240 is injected into the devicereceiving region R1 by the injection port 130 and is forced to fill thespace between the semiconductor device 210 and the substrate 220 by thedynamic part 124 fully surrounding the lid portion 1221. Certainly, theexemplary embodiment herein is merely for illustration, and is notintended to limit the scope of the disclosure.

FIG. 9 illustrates a top view of a molding apparatus according to someexemplary embodiments of the present disclosure. It is noted that themolding apparatus 100 a shown in FIG. 9 contains many features same asor similar to the molding apparatus 100 disclosed earlier with FIG. 8 .For purpose of clarity and simplicity, detail description of same orsimilar features may be omitted, and the same or similar referencenumbers denote the same or like components. The main differences betweenthe molding apparatus 100 a shown in FIG. 9 and the molding apparatus100 disclosed earlier with FIG. 8 are described as follows.

With now reference to FIG. 9 , in accordance with some embodiments ofthe disclosure, the dynamic part 124 partially surrounds the lid portion1221, and the lid portion 1221 is partially connected to the side wallportion 1222. In some exemplary embodiments, the shape of the lidportion 1221 may be substantially the same as the shape of thesemiconductor device (e.g. the semiconductor device 210 shown in FIG. 2). In one of the embodiments, the contact surface S1 of the lid portion1221 and the upper surface of the semiconductor device 210 are both inrectangular shapes while the dimension of the lid portion 1221 isslightly larger than the dimension of the semiconductor device 210 tocover the upper surface of the semiconductor device 210. Accordingly,the dynamic part 124 is arranged as an open loop, which surrounds atleast three sides of the rectangular lid portion 1221, and the injectionport 130 is disposed at the opening of the loop (i.e. the side of therectangular lid portion 1221 that is not surrounded by the dynamic part124). With such arrangement, the molding material 240 is injected intothe device receiving region R1 by the injection port 130 through theside not surrounded by the dynamic part 124 and is forced to fill thespace between the semiconductor device 210 and the substrate 220 by thedynamic part 124 surrounding the rest of the lid portion 1221.Certainly, the exemplary embodiment herein is merely for illustration,and is not intended to limit the scope of the disclosure.

FIG. 10 illustrates a top view of a molding apparatus according to someexemplary embodiments of the present disclosure. It is noted that themolding apparatus 100 b shown in FIG. 10 contains many features same asor similar to the molding apparatus 100 disclosed earlier with FIG. 8 .For purpose of clarity and simplicity, detail description of same orsimilar features may be omitted, and the same or similar referencenumbers denote the same or like components. The main differences betweenthe molding apparatus 100 b shown in FIG. 10 and the molding apparatus100 disclosed earlier with FIG. 8 are described as follows.

With now reference to FIG. 10 , in accordance with some embodiments ofthe disclosure, the dynamic part 124 partially surrounds the lid portion1221, and the lid portion 1221 is partially connected to the side wallportion 1222. In some exemplary embodiments, the contact surface S1 ofthe lid portion 1221 and the upper surface of the semiconductor device210 are both in rectangular shapes while the dimension of the lidportion 1221 is slightly larger than the dimension of the semiconductordevice 210 to cover the upper surface of the semiconductor device 210.Accordingly, the dynamic part 124 is arranged as an open loop, whichsurrounds at least three sides of the rectangular lid portion 1221, andthe injection port 130 is disposed at the side of the rectangular lidportion 1221 that is opposite to the opening of the loop. With sucharrangement, the molding material 240 is injected into the devicereceiving region R1 by the injection port 130 and is forced to fill thespace between the semiconductor device 210 and the substrate 220 by thedynamic part 124 partially surrounding the lid portion 1221. Certainly,the exemplary embodiment herein is merely for illustration, and is notintended to limit the scope of the disclosure.

FIG. 11 illustrates a cross sectional view of a molded semiconductordevice according to some exemplary embodiments of the presentdisclosure. FIG. 12 illustrates a top view of a molded semiconductordevice according to some exemplary embodiments of the presentdisclosure. With now reference to FIG. 11 and FIG. 12 , in accordancewith some embodiments of the disclosure, the molded semiconductor device200 manufactured by the manufacturing method and molding apparatusdescribed above may include a semiconductor device 210 and a moldingmaterial 140. In some embodiments, the molding material 240 encapsulatesthe semiconductor device 210, and an upper surface of the moldingmaterial 240 is substantially coplanar with an upper surface of thesemiconductor device 210. In some embodiments, the molded semiconductordevice 200 may further include a substrate 220 and a plurality ofconductive terminals 230. The semiconductor device 210 is mounted on thesubstrate 220 through the plurality of conductive terminals 230.

In accordance with some embodiments of the disclosure, the moldingmaterial 240 includes a groove 242, which at least partially surroundsthe upper surface of the semiconductor device 210. With now reference toFIG. 8 and FIG. 12 , in the present embodiment, the molding process ofthe molded semiconductor device 200 shown in FIG. 12 may be performed bythe molding apparatus 100 shown in FIG. 8 . In detail, the dynamic part124 of the molding apparatus 100 is arranged as a closed loop, whichfully surrounds the lid portion 1221 and isolate the lid portion 1221from the side wall portion 1222. In some embodiments, the contactsurface S1 of the lid portion 1221 is substantially larger than theupper surface of the semiconductor device 210 for tolerance (avoiddamaging the semiconductor device 210). As such, the boundaries betweenthe lip portion 1221 and the dynamic part 124 would leave a mark (i.e.the groove 242) on the molding material 240 during the molding process.Accordingly, the molded semiconductor device 200 formed by such moldingapparatus 100 shown in FIG. 8 includes the groove 242, which is a closedloop and fully surrounds the upper surface of the semiconductor device210 as it is shown in FIG. 11 and FIG. 12 . In addition, the groove 242maintains a distance d1 from a boundary BD between the semiconductordevice 210 and the molding material 240. For example, the distance d1may range from 200 μm to 2000 μm.

It is noted that a flip chip semiconductor device 210 mounted onto thesubstrate 220 is illustrated herein, but the disclosure is not limitedthereto. In other embodiments, other packages, such as integratedfan-out (InFO) packages, that are suitable for adapting themanufacturing method and molding apparatus described above may also havethe same or similar structural characteristics (e.g. the groove 242 atleast partially surrounding the upper surface of the semiconductordevice 210).

FIG. 13 illustrates a top view of a molded semiconductor deviceaccording to some exemplary embodiments of the present disclosure. It isnoted that the molded semiconductor device 200′ shown in FIG. 13contains many features same as or similar to the molded semiconductordevice 200 disclosed earlier with FIG. 12 . For purpose of clarity andsimplicity, detail description of same or similar features may beomitted, and the same or similar reference numbers denote the same orlike components. The main differences between the molded semiconductordevice 200′ shown in FIG. 13 and the molded semiconductor device 200disclosed earlier with FIG. 12 are described as follows.

In accordance with some embodiments of the disclosure, the moldingmaterial 240′ includes a groove 242′, which partially surrounds theupper surface of the semiconductor device 210. With now reference toFIG. 9 and FIG. 13 , in the present embodiment, the molding process ofthe molded semiconductor device 200′ shown in FIG. 13 may be performedby the molding apparatus 100 a shown in FIG. 9 . In detail, the dynamicpart 124 a of the molding apparatus 100 a is arranged as an open loop,which partially surrounds the lid portion 1221. In some embodiments, thecontact surface S1 of the lid portion 1221 is substantially larger thanthe upper surface of the semiconductor device 210 for tolerance (avoiddamaging the semiconductor device 210). As such, the boundaries betweenthe lip portion 1221 and the dynamic part 124 a would leave a mark (i.e.the groove 242′) on the molding material 240′ during the moldingprocess. Accordingly, the molded semiconductor device 200′ formed bysuch molding apparatus 100 a shown in FIG. 9 includes the groove 242′,which is an open loop and partially surrounds the upper surface of thesemiconductor device 210 as it is shown in FIG. 13 . In addition, thegroove 242′ maintains a distance d1 from a boundary BD between thesemiconductor device 210 and the molding material 240. For example, thedistance d1 may range from 200 μm to 2000 μm. Certainly, the groove maybe vary according to the configuration of the dynamic part. Thedisclosure is not limited thereto.

Based on the above discussions, it can be seen that the presentdisclosure offers various advantages. It is understood, however, thatnot all advantages are necessarily discussed herein, and otherembodiments may offer different advantages, and that no particularadvantage is required for all embodiments.

In accordance with some embodiments of the disclosure, a moldingapparatus is configured for molding a semiconductor device and includesa lower mold and an upper mold. The lower mold is configured to carrythe semiconductor device. The upper mold is disposed above the lowermold for receiving the semiconductor device and includes a mold part anda dynamic part. The mold part is configured to be in contact with theupper surface of the semiconductor device. The dynamic part is disposedaround a device receiving region of the upper mold and configured tomove relatively to the mold part.

In accordance with some embodiments of the disclosure, a manufacturingmethod of a molded semiconductor device includes the following steps. Asemiconductor device is mounted on a substrate. A lower mold is providedfor carrying the semiconductor device mounted on the substrate. An uppermold is provided over the lower mold. The upper mold includes a moldpart covering an upper surface of the semiconductor device and a dynamicpart disposed around a device receiving region of the upper mold. Adynamic part is moved relatively to the mold part along a firstdirection. A molding material is injected into the device receivingregion for encapsulating the semiconductor device. The dynamic part ismoved relatively to the mold part along a second direction opposite tothe first direction.

In accordance with some embodiments of the disclosure, a moldedsemiconductor device includes a semiconductor device and a moldingmaterial. The molding material encapsulates the semiconductor device,wherein an upper surface of the molding material is substantiallycoplanar with an upper surface of the semiconductor device and includesa groove at least partially surrounding the upper surface of thesemiconductor device.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A molding apparatus for molding a semiconductordevice, comprising: a lower mold configured to carry the semiconductordevice; and an upper mold disposed above the lower mold and comprising adevice receiving region for receiving the semiconductor device, andcomprising: a mold part configured to cover the upper surface of thesemiconductor device and comprising a groove surrounding the devicereceiving region; and a dynamic part disposed in the groove andsurrounds the semiconductor device, and configured to move relatively tothe mold part.
 2. The molding apparatus as claimed in claim 1, wherein acontact surface of the mold part for covering the upper surface of thesemiconductor device is substantially larger than the upper surface ofthe semiconductor device.
 3. The molding apparatus as claimed in claim1, further comprises an injection port disposed at the lower mold forinjecting a molding material into the device receiving region.
 4. Themolding apparatus as claimed in claim 1, wherein the mold part comprisesa lid portion having the contact surface covering the upper surface ofthe semiconductor device and a side wall portion surrounding the lidportion to define the device receiving region.
 5. The molding apparatusas claimed in claim 4, wherein the groove is disposed between the lidportion and the side wall portion.
 6. The molding apparatus as claimedin claim 4, wherein the dynamic part encloses the lid portion, and thelid portion and the side wall portion are spaced apart by the dynamicpart.
 7. The molding apparatus as claimed in claim 4, wherein thedynamic part is configured as an open loop, which partially surroundsthe lid portion, and the lid portion is partially connected to the sidewall portion at an opening of the open loop.
 8. The molding apparatus asclaimed in claim 7, wherein an injection port for injecting a moldingmaterial into the device receiving region is disposed at the opening ofthe open loop.
 9. The molding apparatus as claimed in claim 7, whereinan injection port for injecting a molding material into the devicereceiving region is disposed at a side of the lid portion opposite tothe opening of the open loop.
 10. The molding apparatus as claimed inclaim 1, wherein the dynamic part is configured to be moved to a firstposition where a lower surface of the dynamic part is not coplanar withthe contact surface.
 11. The molding apparatus as claimed in claim 1,wherein the dynamic part is configured to be moved to a second positionwhere a lower surface of the dynamic part is substantially coplanar withthe contact surface.
 12. The molding apparatus as claimed in claim 1,wherein the semiconductor device is mounted on a substrate carried bythe lower mold.
 13. A molding apparatus for molding a workpiece,comprising: a lower mold configured to carry the workpiece; an uppermold disposed above the lower mold and comprising a lid portion forcovering an upper surface of the workpiece and a sidewall portionsurrounding the lid portion; and a dynamic part disposed between the lidportion and the sidewall portion and configured to move relatively tothe lid portion.
 14. The molding apparatus as claimed in claim 13,wherein, from a top view, a contact surface of the lid portion forcovering the upper surface of the workpiece is substantially larger thanthe upper surface of the workpiece.
 15. The molding apparatus as claimedin claim 13, wherein the upper mold further comprises a groove where thedynamic part is disposed therein.
 16. The molding apparatus as claimedin claim 1, wherein the workpiece comprises a semiconductor devicemounted on a substrate.
 17. A manufacturing method of a moldedsemiconductor device, comprising: mounting a semiconductor device on asubstrate; disposing the semiconductor device mounted on the substratein a molding apparatus, wherein the molding apparatus comprises a lowermold for carrying the substrate, an upper mold having a lid portion forcovering an upper surface of the semiconductor device and a dynamic partdisposed around the lid portion; moving the dynamic part relatively tothe lid portion along a first direction; injecting a first part of amolding material into the molding apparatus; moving the dynamic partrelatively to the lid portion along a second direction opposite to thefirst direction; and injecting a second part of the molding materialinto the molding apparatus.
 18. The manufacturing method as claimed inclaim 17, wherein the dynamic part is moved along the first direction toa first position where a lower surface of the dynamic part issubstantially lower than a lower surface of the lid portion.
 19. Themanufacturing method as claimed in claim 17, wherein the dynamic part ismoved along the first direction to a first position where a lowersurface of the dynamic part is substantially higher than a lower surfaceof the lid portion.
 20. The manufacturing method as claimed in claim 17,wherein the dynamic part is moved along the second direction to a secondposition where a lower surface of the dynamic part is substantiallycoplanar with a lower surface of the lid portion.